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Computer Science > Emerging Technologies

Title: High Speed and Low Power Sensing Schemes for STT-MRAM with IPMTJs

Abstract: STT-MRAM with interfacial-anisotropy-type perpendicular MTJ (IPMTJ) is a powerful candidate for the low switching energy design of STT-MRAM. In the literature, the reading operation of STT-MRAM structured with IPMTJs have been not studied until this time, in our knowledge. We investigated the reading operation of STT-MRAM structured with IPMTJs. To enumerate the read operations of the NVSenseAmp have successfully been performed a 2.5X reduction in average low power and a 13X increase in average high speed compared with the previous works.
Subjects: Emerging Technologies (cs.ET)
Cite as: arXiv:1803.07037 [cs.ET]
  (or arXiv:1803.07037v1 [cs.ET] for this version)

Submission history

From: Mesut Atasoyu [view email]
[v1] Mon, 19 Mar 2018 16:56:40 GMT (3595kb,D)