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Condensed Matter > Materials Science

Title: Bulk transport properties of Bismuth selenide thin films approaching the two-dimensional limit

Abstract: We have investigated the transport properties of topological insulator Bi2Se3 thin films grown using magnetron sputtering with an emphasis on understanding the behavior as a function of thickness. We show that thickness has a strong influence on all aspects of transport as the two-dimensional limit is approached. Bulk resistivity and Hall mobility show disproportionately large changes below 6 quintuple layer which we directly correlate to an increase in the bulk band gap of few-layer Bi2Se3, an effect that is concomitant with surface gap opening. A tendency to crossover from a metallic to an insulating behavior in temperature-dependent resistivity measurements in ultra-thin Bi2Se3 is also consistent with an increase in the bulk band gap along with enhanced disorder at the film-substrate interface. Our work highlights that the properties of few-layer Bi2Se3 are tunable that may be attractive for a variety of device applications in areas such as optoelectronics, nanoelectronics and spintronics.
Comments: 13 pages, 4 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1803.06593 [cond-mat.mtrl-sci]
  (or arXiv:1803.06593v1 [cond-mat.mtrl-sci] for this version)

Submission history

From: Dipanjan Mazumdar [view email]
[v1] Sun, 18 Mar 2018 02:47:09 GMT (596kb)